Electric and Photoluminescence Analyzer

Overview

This luminescence Analyzer integrates a Photoluminescence (PL), Electroluminescence (EL) technology, and a I-V Testing Technology, has a function of EL imaging Tester, PL imaging Tester, as well as function of I-V Tester. It is being using to quantitatively map Minority-Carrier Lifetime, and to characterize the defect of multi-crystalline silicon bricks, wafer & solar wafer, and measure the key parameters from solar cell I-V Curve. It is also a useful tool for scientist to develop other methodology & parameters that can be used as a promising technique for online material monitoring and process control.

Features

Vairable Inspection capabilities:

• Electroluminescence (EL)
• Reverse-bias EL
• Photoluminescence (PL)

Applicable for wafers at any processing stage from as cut wafers to finished cells;

High resolution Cooled CCD has pixel of 1024 x 1024, with a Low Image Noise;

High resolution images allow detection of defects around grain boundaries, dislocations, and low lifetime areas on edge and corner wafers;

Correlation of PL and lifetime is carried out by calibration with simultaneous μ-PCD measurements, QSS-μ-PCD measurement;

Application includes Research & Development, process development, manufacturing equipment commissioning, and manufacturing performance improvement;